Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BCX70J BCX70J

Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications For AF input stages and driver applications
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Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications For AF input stages and driver applications
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Datasheet
Datasheet Summary
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BCX70J is an NPN silicon bipolar transistor for AF input stages and driver applications, housed in a SOT23 package. It has a collector-emitter voltage rating of 45 V, a collector current rating of 100 mA, and a total power dissipation of 330 mW at a case temperature below 71 °C. The transistor meets AEC-Q101 qualification and is RoHS compliant. Its DC current gain (hFE) ranges from 300 to 460 at IC = 2 mA and VCE = 5 V, with a transition frequency of 250 MHz and low noise figure up to 2 dB at 200 µA collector current. Collector-emitter saturation voltage is specified as 0.55 V max at IC = 50 mA and IB = 1.25 mA. Complementary PNP types are BCW61 and BCX71.

Datasheet Summary
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BCX70J is an NPN silicon bipolar transistor for AF input stages and driver applications, housed in a SOT23 package. It has a collector-emitter voltage rating of 45 V, a collector current rating of 100 mA, and a total power dissipation of 330 mW at a case temperature below 71 °C. The transistor meets AEC-Q101 qualification and is RoHS compliant. Its DC current gain (hFE) ranges from 300 to 460 at IC = 2 mA and VCE = 5 V, with a transition frequency of 250 MHz and low noise figure up to 2 dB at 200 µA collector current. Collector-emitter saturation voltage is specified as 0.55 V max at IC = 50 mA and IB = 1.25 mA. Complementary PNP types are BCW61 and BCX71.

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Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BCX70J - BCX70J - Infineon Technologies AG
Neubiberg, Germany
Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BCX70J
BCX70J
Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BCX70J BCX70J
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications For AF input stages and driver applications

NPN Silicon AF Transistors


Summary of Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types: BCW61, BCX71 (PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q105

Potential Applications

  • For AF input stages and driver applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BCX70J
Product Name Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BCX70J
Polarity NPN (Single); NPN
Package Type SOT23; SOT23
Packing Method Tape Reel; TAPE & REEL
IC(max) 100 milliamps
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