Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single - BCW67A BCW67A

Description
Manufacturer: Infineon Technologies Win Source Part Number: 200936-BCW67A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 32V Max Vce (sat): 700mV @ 50mA, 500mA Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 200936-BCW67A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 32V Max Vce (sat): 700mV @ 50mA, 500mA Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BCW67A - 200936-BCW67A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BCW67A
200936-BCW67A
TRANSISTORS - Transistors (BJT) - Single - BCW67A 200936-BCW67A
Manufacturer: Infineon Technologies Win Source Part Number: 200936-BCW67A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 32V Max Vce (sat): 700mV @ 50mA, 500mA Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 200936-BCW67A
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT23-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 32V
Max Vce (sat): 700mV @ 50mA, 500mA
Collector Cut-off Current(Max): 20nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 1V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 200936-BCW67A
Product Name TRANSISTORS - Transistors (BJT) - Single - BCW67A
Polarity PNP; PNP
Unlock Full Specs
to access all available technical data

Similar Products

DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor - TGF2936 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type die
Transistor Grade / Operating Range Military
View Details
Igbt Module, 2.6V, 15A; Continuous Collector Current Fuji Electric - 56P5496 - Newark, An Avnet Company
Specs
Transistor Type IGBT
Package Type TO-3
View Details
CSD16410Q5A N-Channel NexFET™ Power MOSFET - CSD16410Q5A - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
6 suppliers
Single FETs, MOSFETs - 94-4156PBF-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
View Details
3 suppliers