Infineon Technologies AG Bipolar Transistors - BJT BCX 71H E6327

Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Datasheet
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PNP silicon bipolar transistors for audio frequency input stages and driver applications, available in SOT23 package. The BCX71H variant features a collector-emitter voltage rating of 45 V, collector current of 100 mA, and maximum total power dissipation of 330 mW. It has a DC current gain (hFE) range of 30 to 200 at IC = 10 µA and VCE = 5 V, and 180 to 250 at IC = 2 mA and VCE = 5 V. Collector-emitter saturation voltage is up to 0.55 V at IC = 50 mA and IB = 1.25 mA. The device meets AEC-Q101 qualification and is RoHS compliant. Noise figure is 2 dB max at IC = 200 µA, VCE = 5 V, and f = 1 kHz.

Datasheet Summary
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PNP silicon bipolar transistors for audio frequency input stages and driver applications, available in SOT23 package. The BCX71H variant features a collector-emitter voltage rating of 45 V, collector current of 100 mA, and maximum total power dissipation of 330 mW. It has a DC current gain (hFE) range of 30 to 200 at IC = 10 µA and VCE = 5 V, and 180 to 250 at IC = 2 mA and VCE = 5 V. Collector-emitter saturation voltage is up to 0.55 V at IC = 50 mA and IB = 1.25 mA. The device meets AEC-Q101 qualification and is RoHS compliant. Noise figure is 2 dB max at IC = 200 µA, VCE = 5 V, and f = 1 kHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 71H E6327
Bipolar Transistors - BJT BCX 71H E6327
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 71H E6327
Product Name Bipolar Transistors - BJT
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