Infineon Technologies AG Bipolar Transistors - BJT BCX 70H E6327

Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Datasheet
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BCX70H E6327 is an NPN silicon AF transistor in SOT23 package, designed for audio input stages and driver applications. It features a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71°C. The device has a DC current gain (hFE) range of 200 to 460 at IC = 2 mA and VCE = 5 V, with a transition frequency of 250 MHz. It meets AEC-Q101 qualifications and is RoHS compliant. The SOT23 package has a pin configuration of 1=B, 2=E, 3=C.

Datasheet Summary
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BCX70H E6327 is an NPN silicon AF transistor in SOT23 package, designed for audio input stages and driver applications. It features a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71°C. The device has a DC current gain (hFE) range of 200 to 460 at IC = 2 mA and VCE = 5 V, with a transition frequency of 250 MHz. It meets AEC-Q101 qualifications and is RoHS compliant. The SOT23 package has a pin configuration of 1=B, 2=E, 3=C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 70H E6327
Bipolar Transistors - BJT BCX 70H E6327
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 70H E6327
Product Name Bipolar Transistors - BJT
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