Infineon Technologies AG Bipolar Transistors - BJT BCX 70H E6327

Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Datasheet
Datasheet Summary
Powered by GS/AI

BCX70H E6327 is an NPN silicon AF transistor in SOT23 package, designed for audio input stages and driver applications. It features a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71°C. The device has a DC current gain (hFE) range of 200 to 460 at IC = 2 mA and VCE = 5 V, with a transition frequency of 250 MHz. It meets AEC-Q101 qualifications and is RoHS compliant. The SOT23 package has a pin configuration of 1=B, 2=E, 3=C.

Datasheet Summary
Powered by GS/AI

BCX70H E6327 is an NPN silicon AF transistor in SOT23 package, designed for audio input stages and driver applications. It features a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71°C. The device has a DC current gain (hFE) range of 200 to 460 at IC = 2 mA and VCE = 5 V, with a transition frequency of 250 MHz. It meets AEC-Q101 qualifications and is RoHS compliant. The SOT23 package has a pin configuration of 1=B, 2=E, 3=C.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 70H E6327
Bipolar Transistors - BJT BCX 70H E6327
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 70H E6327
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data