The BFN39 is a PNP silicon high-voltage transistor designed for video output stages and switching power supplies. It is packaged in SOT223 with dimensions of 6.5 mm × 3.5 mm × 1.75 mm. The device has a collector-emitter breakdown voltage of 300 V, a collector current rating of 200 mA, and a peak collector current of 500 mA. It supports a total power dissipation of 1.5 W at 124 °C and a maximum junction temperature of 150 °C. The collector-emitter saturation voltage is ≤0.5 V at 20 mA collector current and 2 mA base current. The transistor meets AEC-Q101 qualifications and is RoHS compliant.
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN39
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFN39 |
| Product Name | Bipolar Transistor, High Voltage Transistor |
| Polarity | PNP (Single); PNP |
| Package Type | SOT223; SOT223 |
| Packing Method | Tape Reel; TAPE & REEL |
| IC(max) | 30 to 200 milliamps |
