Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327 BFN39 E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201157-BFN39 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 500mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 30mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 201157-BFN39 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 500mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 30mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327 - 201157-BFN39 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327
201157-BFN39 E6327
TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327 201157-BFN39 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201157-BFN39 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 500mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 30mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 201157-BFN39 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Max Vce (sat): 500mV @ 2mA, 20mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 30mA, 10V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 201157-BFN39 E6327
Product Name TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327
Polarity PNP; PNP
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