Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327 BFN39 E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201157-BFN39 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 500mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 30mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 201157-BFN39 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 500mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 30mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327 - 201157-BFN39 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327
201157-BFN39 E6327
TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327 201157-BFN39 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201157-BFN39 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 500mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 30mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 201157-BFN39 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Max Vce (sat): 500mV @ 2mA, 20mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 30mA, 10V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 201157-BFN39 E6327
Product Name TRANSISTORS - Transistors (BJT) - Single - BFN39 E6327
Polarity PNP; PNP
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor - QPD0060 - Qorvo
Specs
Transistor Technology / Material DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Package Type DFN
View Details
Transistor - 66826203 - Radwell International
Fuji Electric Corp. of America
View Details
Bipolar RF Transistors - LM3046MXTR-ND - DigiKey
Specs
Polarity NPN
Package Type "14-SOIC (0.154"", 3.90mm Width)"
View Details
3 suppliers
Single IGBTs - 448-AIKW75N60CTXKSA1-ND - DigiKey
Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-247; TO-247-3
Transistor Grade / Operating Range Automotive
View Details
6 suppliers