Infineon Technologies AG Bipolar Transistors - BJT BCX41E6327XT

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Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR
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NPN silicon bipolar transistor for general audio frequency and switching applications in SOT23 package, with a 125 V collector-emitter voltage rating, 800 mA continuous collector current, and 330 mW power dissipation at 79 °C. Complementary PNP type BCX42 is available. RoHS compliant and qualified to AEC-Q101. Junction temperature range is -65 °C to 150 °C. Thermal resistance from junction to soldering point is ≤215 K/W.

Datasheet Summary
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NPN silicon bipolar transistor for general audio frequency and switching applications in SOT23 package, with a 125 V collector-emitter voltage rating, 800 mA continuous collector current, and 330 mW power dissipation at 79 °C. Complementary PNP type BCX42 is available. RoHS compliant and qualified to AEC-Q101. Junction temperature range is -65 °C to 150 °C. Thermal resistance from junction to soldering point is ≤215 K/W.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX41E6327XT
Bipolar Transistors - BJT BCX41E6327XT
Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX41E6327XT
Product Name Bipolar Transistors - BJT
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