Infineon Technologies AG Bipolar Transistors - BJT BCX 71J E6433

Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
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PNP silicon bipolar transistors for AF input stages and driver applications, packaged in SOT23, with a maximum collector-emitter voltage of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. The BCX71J variant has a DC current gain (hFE) range of 40 to 300 at 10 µA collector current and 250 to 460 at 2 mA, with a transition frequency of 250 MHz, noise figure of 2 dB, and collector-emitter saturation voltage of 0.2 V at 50 mA. Qualified to AEC-Q101 and RoHS compliant.

Datasheet Summary
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PNP silicon bipolar transistors for AF input stages and driver applications, packaged in SOT23, with a maximum collector-emitter voltage of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. The BCX71J variant has a DC current gain (hFE) range of 40 to 300 at 10 µA collector current and 250 to 460 at 2 mA, with a transition frequency of 250 MHz, noise figure of 2 dB, and collector-emitter saturation voltage of 0.2 V at 50 mA. Qualified to AEC-Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 71J E6433
Bipolar Transistors - BJT BCX 71J E6433
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 71J E6433
Product Name Bipolar Transistors - BJT
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