Infineon Technologies AG Datasheets for Bipolar RF Transistors

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more

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Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // PZTA42
NPN / PNP Silicon Switching Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS...
NPN Silicon High-Voltage Transistors Summary of Features Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching...
NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching...
PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 /...
PNP Silicon Switching Transistor Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with...
PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
PNP Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with...

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