Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single - BCW 66H E6327 BCW 66H E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 1022779-BCW 66H E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 170MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT23-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 450mV @ 50mA, 500mA
Collector Cut-off Current(Max): 20nA (ICBO)
Typical Gain (hFE) (Min): 250 @ 100mA, 1V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Defence, Military & Aerospace

TRANS NPN 45V 0.8A SOT23 Product overview: BCW 66H E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 0.8A, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 0.8A, SOT23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BCW 66H E6327 can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 45V 800mA 170MHz 330mW Surface Mount PG-SOT23