Infineon Technologies AG RF Bipolar Transistors BFP 640 H6327

Description
RF Bipolar Transistors RF BIP TRANSISTOR
Description
RF Bipolar Transistors RF BIP TRANSISTOR
Datasheet
Datasheet Summary
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The BFP640 is a silicon germanium carbon (SiGe:C) NPN bipolar RF transistor designed for low noise amplifier applications in wireless communication systems. It is housed in an SOT343 package with visible leads and is RoHS compliant and halogen-free. The device features a transition frequency of up to 42 GHz, a minimum noise figure of 0.85 dB at 3.5 GHz, and an output third-order intercept point of 27.5 dBm at 5.5 GHz. It supports collector-emitter voltages up to 4.1 V and collector currents up to 50 mA, with a total power dissipation of 200 mW. The part is qualified to AEC-Q101 standards.

Datasheet Summary
Powered by GS/AI

The BFP640 is a silicon germanium carbon (SiGe:C) NPN bipolar RF transistor designed for low noise amplifier applications in wireless communication systems. It is housed in an SOT343 package with visible leads and is RoHS compliant and halogen-free. The device features a transition frequency of up to 42 GHz, a minimum noise figure of 0.85 dB at 3.5 GHz, and an output third-order intercept point of 27.5 dBm at 5.5 GHz. It supports collector-emitter voltages up to 4.1 V and collector currents up to 50 mA, with a total power dissipation of 200 mW. The part is qualified to AEC-Q101 standards.

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Sheung Wan, Hong Kong
RF Bipolar Transistors
BFP 640 H6327
RF Bipolar Transistors BFP 640 H6327
RF Bipolar Transistors RF BIP TRANSISTOR

RF Bipolar Transistors RF BIP TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BFP 640 H6327
Product Name RF Bipolar Transistors
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