Infineon Technologies AG Bipolar Transistor, High Voltage Transistor BFN24

Description
NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications Suitable for video output stages TV sets and switching power supplies
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Description
NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications Suitable for video output stages TV sets and switching power supplies
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Datasheet
Datasheet Summary
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BFN24 is an NPN silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It is packaged in SOT23 and has a collector-emitter breakdown voltage of 250 V, a maximum collector current of 200 mA, and a total power dissipation of 360 mW at 74 °C. The junction temperature rating is 150 °C. The device is RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
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BFN24 is an NPN silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It is packaged in SOT23 and has a collector-emitter breakdown voltage of 250 V, a maximum collector current of 200 mA, and a total power dissipation of 360 mW at 74 °C. The junction temperature rating is 150 °C. The device is RoHS compliant and qualified to AEC-Q101.

Suppliers

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Supplier Links
Bipolar Transistor, High Voltage Transistor - BFN24 - Infineon Technologies AG
Neubiberg, Germany
Bipolar Transistor, High Voltage Transistor
BFN24
Bipolar Transistor, High Voltage Transistor BFN24
NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications Suitable for video output stages TV sets and switching power supplies

NPN Silicon High-Voltage Transistors


Summary of Features

  • Suitable for video output stages in TV sets and switching power supplies
  • High breakdown voltage
  • Low collector-emitter saturation voltage
  • Complementary type: BFN27 (PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101

Potential Applications

  • Suitable for video output stages TV sets and switching power supplies
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFN24
Product Name Bipolar Transistor, High Voltage Transistor
Polarity NPN (Single); NPN
Package Type SOT23; SOT23
Packing Method Tape Reel; TAPE & REEL
IC(max) 200 milliamps
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