Infineon Technologies AG Datasheets for Bipolar RF Transistors
Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR158W | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR183W | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX55-16 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX68-25 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-10 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-25 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BDP953 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN18 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN19 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN38 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN39 | |
| NPN Silicon AF and Switching Transistor Summary of Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX41 (NPN) Pb-free (RoHS compliant) package Qualified according... | |
| NPN Silicon AF and Switching Transistor Summary of Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX42 (PNP) Pb-free (RoHS compliant) package Qualified according... | |
| NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant)... | |
| NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant)... | |
| NPN Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| NPN Silicon Digital Transistors Summary of Features Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ) BCR523U: Two (galvanic) internal isolated transistors with... | |
| NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP)... | |
| NPN/PNP Silicon Digital Transistor Array Summary of Features Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and... | |
| PNP Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Complementary types: BCW66... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q102 Potential Applications For general... | |
| PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 2.2 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 10 kΩ) BCR183S / U:... | |
| PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 47 kΩ ) BCR185S: Two... | |
| PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 kΩ , R2 = 47 kΩ ) Pb-free (RoHS... | |
| PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ ) Pb-free (RoHS compliant) package... | |
| PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN)... |
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