Infineon Technologies AG Datasheets for Bipolar RF Transistors

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more

Page: 1 2 3 4 5
Product Name Notes
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR135W
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR158W
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR183W
NPN Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=10 kΩ, R2=47 kΩ) BCR135S: Two internally isolated transistors with good matching...
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S / U: Two internally isolated transistors with good matching...
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S : Two internally isolated transistors with good matching in...
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon Digital Transistor Summary of Features Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) BCR133S: Two internally...
NPN Silicon Digital Transistors Summary of Features Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ) BCR523U: Two (galvanic) internal isolated transistors with...
NPN/PNP Silicon Digital Transistor Array Summary of Features Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and...
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 2.2 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 10 kΩ) BCR183S / U:...
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 47 kΩ ) BCR185S: Two...
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 kΩ , R2 = 47 kΩ ) Pb-free (RoHS...
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ ) Pb-free (RoHS compliant) package...

<< Prev Next >>