Infineon Technologies AG Bipolar Transistor, High Voltage Transistor BFN38

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Description
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Datasheet
Datasheet Summary
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BFN38 is an NPN silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It is packaged in SOT223 with dimensions of 6.5 mm × 3.5 mm × 1.75 mm. The device has a collector-emitter breakdown voltage of 300 V, a maximum collector current of 200 mA, and a peak collector current of 500 mA. It features a low collector-emitter saturation voltage of up to 0.5 V and a transition frequency of 70 MHz. The transistor is RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
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BFN38 is an NPN silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It is packaged in SOT223 with dimensions of 6.5 mm × 3.5 mm × 1.75 mm. The device has a collector-emitter breakdown voltage of 300 V, a maximum collector current of 200 mA, and a peak collector current of 500 mA. It features a low collector-emitter saturation voltage of up to 0.5 V and a transition frequency of 70 MHz. The transistor is RoHS compliant and qualified to AEC-Q101.

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Bipolar Transistor, High Voltage Transistor - BFN38 - Infineon Technologies AG
Neubiberg, Germany
Bipolar Transistor, High Voltage Transistor
BFN38
Bipolar Transistor, High Voltage Transistor BFN38
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN38

Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN38

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Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFN38
Product Name Bipolar Transistor, High Voltage Transistor
Polarity NPN (Single); NPN
Package Type SOT223; SOT223
Packing Method Tape Reel; TAPE & REEL
IC(max) 30 to 200 milliamps
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