Infineon Technologies AG Bipolar Transistor, High Voltage Transistor BFN19

BFN19 is a PNP silicon high-voltage transistor designed for video output stages and switching power supplies. It is packaged in an SOT89 case with dimensions of 4.5 mm × 2.5 mm × 1.5 mm. The device has a collector-emitter voltage rating of 300 V, a collector current of 200 mA, and a peak collector current of 500 mA. Total power dissipation is rated at 1 W at a case temperature of 130 °C, with a maximum junction temperature of 150 °C. It features a low collector-emitter saturation voltage of 0.5 V and a transition frequency of 100 MHz. The transistor is RoHS compliant and qualified to AEC-Q101 standards.