NPN silicon AF transistor for input stages and driver applications, packaged in SOT23 with a 3.1 mm length, 1.9 mm width, and 1.15 mm height. Rated for a maximum collector-emitter voltage of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. Features a transition frequency of 250 MHz, DC current gain (hFE) ranging from 300 to 460 for the J grade, and a collector-emitter saturation voltage of up to 0.55 V at 50 mA collector current. Complies with AEC-Q101 and is RoHS compliant.
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCX 70J E6327 |
| Product Name | Bipolar Transistors - BJT |
