Infineon Technologies AG Bipolar Transistors - BJT BCX 41 E6433

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Bipolar Transistors - BJT NPN Silicon AF Switching Transistor
Description
Bipolar Transistors - BJT NPN Silicon AF Switching Transistor
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NPN silicon bipolar junction transistor for general audio frequency and switching applications, housed in an SOT23 package with dimensions of 2.9 mm × 1.3 mm × 1.0 mm. It has a collector-emitter voltage rating of 125 V, a continuous collector current of 800 mA, and a peak collector current of 1 A. Power dissipation is rated at 330 mW with a junction temperature limit of 150 °C. The device complies with AEC-Q101 and is Pb-free (RoHS compliant).

Datasheet Summary
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NPN silicon bipolar junction transistor for general audio frequency and switching applications, housed in an SOT23 package with dimensions of 2.9 mm × 1.3 mm × 1.0 mm. It has a collector-emitter voltage rating of 125 V, a continuous collector current of 800 mA, and a peak collector current of 1 A. Power dissipation is rated at 330 mW with a junction temperature limit of 150 °C. The device complies with AEC-Q101 and is Pb-free (RoHS compliant).

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 41 E6433
Bipolar Transistors - BJT BCX 41 E6433
Bipolar Transistors - BJT NPN Silicon AF Switching Transistor

Bipolar Transistors - BJT NPN Silicon AF Switching Transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 41 E6433
Product Name Bipolar Transistors - BJT
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