Infineon Technologies AG Bipolar Transistors - BJT BCX 41 E6327

Description
Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR
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NPN silicon bipolar transistor for general audio frequency and switching applications, housed in a SOT23 package. It has a collector-emitter voltage rating of 125 V, a continuous collector current of 800 mA, and a peak collector current of 1 A. Total power dissipation is 330 mW at a case temperature below 79 °C, with a junction temperature limit of 150 °C. The device has a collector-emitter saturation voltage of up to 0.9 V at 300 mA collector current and 30 mA base current, and a transition frequency of 100 MHz. It is RoHS compliant and qualified to AEC-Q101 standard.

Datasheet Summary
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NPN silicon bipolar transistor for general audio frequency and switching applications, housed in a SOT23 package. It has a collector-emitter voltage rating of 125 V, a continuous collector current of 800 mA, and a peak collector current of 1 A. Total power dissipation is 330 mW at a case temperature below 79 °C, with a junction temperature limit of 150 °C. The device has a collector-emitter saturation voltage of up to 0.9 V at 300 mA collector current and 30 mA base current, and a transition frequency of 100 MHz. It is RoHS compliant and qualified to AEC-Q101 standard.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 41 E6327
Bipolar Transistors - BJT BCX 41 E6327
Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 41 E6327
Product Name Bipolar Transistors - BJT
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