Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFG135A BFG135A

Manufacturer: Infineon Technologies
Win Source Part Number: 201146-BFG135A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB to 14dB
Frequency - Transition: 6GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT223-4
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 80 @ 100mA, 8V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

TRANS NPN RF 15V 150MA SOT223 Product overview: BFG135A from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V, 150MA. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, 150MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG135A can be used for catalog matching and distributor lookup.