Infineon Technologies AG Bipolar Transistors - BJT BCX 70G E6327

Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
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NPN silicon bipolar transistor for AF input stages and driver applications, packaged in SOT23, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW. Features a minimum DC current gain of 180 at 2 mA collector current and 5 V collector-emitter voltage, transition frequency of 250 MHz, and noise figure of up to 2 dB. Qualified to AEC-Q101 and RoHS compliant.

Datasheet Summary
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NPN silicon bipolar transistor for AF input stages and driver applications, packaged in SOT23, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW. Features a minimum DC current gain of 180 at 2 mA collector current and 5 V collector-emitter voltage, transition frequency of 250 MHz, and noise figure of up to 2 dB. Qualified to AEC-Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 70G E6327
Bipolar Transistors - BJT BCX 70G E6327
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 70G E6327
Product Name Bipolar Transistors - BJT
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