Infineon Technologies AG Bipolar Transistors - BJT BCW 66KG E6327

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Bipolar Transistors - BJT NPN 45.0 V 100 mA
Description
Bipolar Transistors - BJT NPN 45.0 V 100 mA
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NPN silicon bipolar transistor for general audio frequency applications in SOT23 package, with a collector-emitter voltage rating of 45 V, continuous collector current of 800 mA, and power dissipation of 500 mW. The BCW66KG variant has a minimum DC current gain (hFE) of 110 at 100 µA collector current and 160 at 100 mA collector current, with a maximum collector-emitter saturation voltage of 0.3 V at 100 mA collector current and 10 mA base current. It is RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
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NPN silicon bipolar transistor for general audio frequency applications in SOT23 package, with a collector-emitter voltage rating of 45 V, continuous collector current of 800 mA, and power dissipation of 500 mW. The BCW66KG variant has a minimum DC current gain (hFE) of 110 at 100 µA collector current and 160 at 100 mA collector current, with a maximum collector-emitter saturation voltage of 0.3 V at 100 mA collector current and 10 mA base current. It is RoHS compliant and qualified to AEC-Q101.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCW 66KG E6327
Bipolar Transistors - BJT BCW 66KG E6327
Bipolar Transistors - BJT NPN 45.0 V 100 mA

Bipolar Transistors - BJT NPN 45.0 V 100 mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCW 66KG E6327
Product Name Bipolar Transistors - BJT
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