Infineon Technologies AG Bipolar Transistors - BJT BCX 71K E6327

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Bipolar Transistors - BJT PNP 45 V 100 mA
Description
Bipolar Transistors - BJT PNP 45 V 100 mA
Datasheet
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW. Features low collector-emitter saturation voltage, high current gain (hFE min 100 to max 460 at IC = 10 µA, VCE = 5 V for D/K group), and low noise figure (2 dB typical). Qualified to AEC-Q101 and RoHS compliant.

Datasheet Summary
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW. Features low collector-emitter saturation voltage, high current gain (hFE min 100 to max 460 at IC = 10 µA, VCE = 5 V for D/K group), and low noise figure (2 dB typical). Qualified to AEC-Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 71K E6327
Bipolar Transistors - BJT BCX 71K E6327
Bipolar Transistors - BJT PNP 45 V 100 mA

Bipolar Transistors - BJT PNP 45 V 100 mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 71K E6327
Product Name Bipolar Transistors - BJT
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