Infineon Technologies AG Single Bipolar Transistors BCX51-16E6327

PNP silicon AF transistors for amplifier driver and output stages, available in an SOT89 package. The BCX51-16 variant features a collector-emitter voltage rating of 45 V, a continuous collector current of 1 A, and a peak collector current of 1.5 A. It has a collector-emitter saturation voltage of up to 0.5 V at 500 mA collector current and 50 mA base current, with a DC current gain ranging from 100 to 250 at 150 mA collector current and 2 V collector-emitter voltage. The transition frequency is 125 MHz. The device is RoHS compliant and qualified to AEC-Q101 standards. Junction temperature ranges from -65 °C to 150 °C, with a total power dissipation of 2 W at a case temperature of 120 °C and thermal resistance of no more than 15 K/W from junction to soldering point.