Infineon Technologies AG Bipolar Transistors - BJT BCX 42 E6433

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Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR
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BCX42 is a PNP silicon bipolar junction transistor designed for general audio frequency and switching applications. It is packaged in an SOT23 case with dimensions conforming to the standard SOT23 footprint. The device has a collector-emitter voltage rating of 125 V, a continuous collector current of 800 mA, and a peak collector current of 1 A. Total power dissipation is 330 mW at a case temperature below 79 °C, with a maximum junction temperature of 150 °C. It features a low collector-emitter saturation voltage of up to 0.9 V at 300 mA collector current. The transistor is RoHS compliant and qualified to AEC-Q101 standards. Its complementary NPN counterpart is the BCX41.

Datasheet Summary
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BCX42 is a PNP silicon bipolar junction transistor designed for general audio frequency and switching applications. It is packaged in an SOT23 case with dimensions conforming to the standard SOT23 footprint. The device has a collector-emitter voltage rating of 125 V, a continuous collector current of 800 mA, and a peak collector current of 1 A. Total power dissipation is 330 mW at a case temperature below 79 °C, with a maximum junction temperature of 150 °C. It features a low collector-emitter saturation voltage of up to 0.9 V at 300 mA collector current. The transistor is RoHS compliant and qualified to AEC-Q101 standards. Its complementary NPN counterpart is the BCX41.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 42 E6433
Bipolar Transistors - BJT BCX 42 E6433
Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 42 E6433
Product Name Bipolar Transistors - BJT
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