Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BF776 E6327 BF776 E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 201054-BF776 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 24dB
Frequency - Transition: 46GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.8dB to 1.3dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V
Typical Gain (hFE) (Min): 180 @ 30mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

TRANS RF NPN 1.8GHZ 4.0V SOT343 Product overview: BF776 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8GHZ, 4.0V. Search-friendly keywords include transistor, BJT, switching, amplification, 1.8GHZ, 4.0V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF776 E6327 can be used for catalog matching and distributor lookup.