Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BF776 E6327 BF776 E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201054-BF776 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 24dB Frequency - Transition: 46GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.8dB to 1.3dB @ 1.8GHz to 6GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V Typical Gain (hFE) (Min): 180 @ 30mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 201054-BF776 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 24dB Frequency - Transition: 46GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.8dB to 1.3dB @ 1.8GHz to 6GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V Typical Gain (hFE) (Min): 180 @ 30mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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TRANSISTORS - RF Transistors (BJT) - BF776 E6327 - 201054-BF776 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BF776 E6327
201054-BF776 E6327
TRANSISTORS - RF Transistors (BJT) - BF776 E6327 201054-BF776 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201054-BF776 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 24dB Frequency - Transition: 46GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.8dB to 1.3dB @ 1.8GHz to 6GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V Typical Gain (hFE) (Min): 180 @ 30mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 201054-BF776 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 24dB
Frequency - Transition: 46GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.8dB to 1.3dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V
Typical Gain (hFE) (Min): 180 @ 30mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 201054-BF776 E6327
Product Name TRANSISTORS - RF Transistors (BJT) - BF776 E6327
Polarity NPN; NPN
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