Infineon Technologies AG Bipolar Transistor, High Voltage Transistor BFN18

The BFN18 is an NPN silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It is packaged in a SOT89-3D case with pin configuration: 1=Base, 2=Collector, 3=Emitter, and 4=Collector. The device has a collector-emitter breakdown voltage of 300 V, a maximum collector current of 200 mA, and a peak collector current of 500 mA. Total power dissipation is rated at 1.5 W with a maximum junction temperature of 150 °C. The junction-to-soldering-point thermal resistance is ≤20 K/W. The transistor is RoHS compliant and qualified to AEC-Q101 standards.