NPN silicon high-voltage transistors for video output stages and switching power supplies, in SOT23 package. The BFN26 variant has a collector-emitter breakdown voltage of 300 V, collector-base breakdown voltage of 300 V, maximum collector current of 200 mA, peak collector current of 500 mA, and collector-emitter saturation voltage of 0.5 V at 20 mA collector current and 2 mA base current. It features a minimum DC current gain of 30 at 30 mA collector current, transition frequency of 70 MHz, and junction temperature rating up to 150 °C. The device is RoHS compliant and qualified to AEC-Q101.
Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFN 26 E6327 |
| Product Name | Bipolar Transistors - BJT |
