Infineon Technologies AG Bipolar Transistors - BJT BCW 66KF E6327

NPN silicon bipolar transistor for general audio frequency applications in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 800 mA, and power dissipation of 500 mW. It has a junction temperature limit of 150 °C and is qualified to AEC-Q101. The BCW66KF variant offers a minimum DC current gain (hFE) of 75 at 100 µA to 10 mA collector current and 100 at 100 mA collector current, with a collector-emitter saturation voltage of up to 0.3 V at 100 mA collector current and 10 mA base current. The transistor is RoHS compliant.