NPN silicon high-voltage transistors for video output stages and switching power supplies, housed in SOT23 packaging. Rated for a collector-emitter voltage of 250 V, with a maximum collector current of 200 mA and total power dissipation of 360 mW at 74 °C. Junction temperature range extends to 150 °C. Complies with RoHS and is qualified to AEC-Q101. Features a low collector-emitter saturation voltage of up to 0.4 V at 20 mA collector current and 2 mA base current, and a transition frequency of 70 MHz. Cutoff current is below 0.1 µA at 200 V and 25 °C.
Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFN 24 E6327 |
| Product Name | Bipolar Transistors - BJT |
