ROHM Semiconductor USA, LLC Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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| Product Name | Notes |
|---|---|
| 1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET. ROHM Featured Products SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board Apprication Note (PDF: 1.9MB), Presentation Document (PDF: 1.0MB), Buy Evaluation Board... | |
| 1700V 4A N-channel SiC (Silicon Carbide) power MOSFET. | |
| 1700V 6A N-channel SiC (Silicon Carbide) power MOSFET. | |
| 400V 20A N-channel SiC power MOSFET for Audio | |
| 650V 29A N-channel SiC power MOSFET | |
| 650V 30A N-channel SiC (Silicon Carbide) power MOSFET. | |
| Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Middle Power MOSFET RW1C026ZP is suitable for switching power supply. | |
| Middle Power MOSFET SH8K25 is suitable for switching power supply. | |
| Middle Power MOSFET SH8K26 is suitable for switching power supply. | |
| Middle Power MOSFET SH8KA4 is suitable for switching and Motor drive application. | |
| MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to... | |
| Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various... | |
| ROHM recommends RE1C002UN as standard spec. | |
| ROHM recommends RE1J002YN as standard spec. | |
| RUC002N05HZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver. | |
| RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. | |
| RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. | |
| RUS100N02 is high power small mold package(SOP8) MOSFETfor switching. | |
| RV3CA01ZP is the 0604 size ultra-small package MOSFET for for portable devices. | |
| RVQ040N05FRA is the high reliability Automotive MOSFET, suitable for the switching application. | |
| RXL035N03 is low on-resistance and small surface mount package MOSFET for switching application. | |
| S2206 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S2301 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S2305 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S2306 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S2308 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4001 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4002 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4003 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4005 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4007 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4008 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4101 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4102 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4103 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4105 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| S4108 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in... | |
| SCT3017AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3022AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3022KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3030AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3040KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3060AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3080AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. This new series adopts a... | |
| SCT3105KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| SH8J31 is complex type (Pch+Pch) middle power MOSFET for Motor Drive application. | |
| SH8K41 is low on-resistance MOSFET, suitable for switching application. | |
| SH8K52 is a Power MOSFET with Low on-resistance, suitable for switching. | |
| SH8KA2 is small surface mount package MOSFET which is suitable for switching and motor drive application. | |
| SH8KA7 is low on-resistance and small surface mount package MOSFET for switching and mortor drive application. | |
| The small package(1006size) RV2C014BC is suitable for portable devices. | |
| The Ultra Small Package(0806size). | |
| The ultra-small package RV3C001ZP is suitable for portable devices. | |
| The ultra-small package RV3C002UN is suitable for portable devices. | |
| The ultra-small package(1006size) RV2C001ZP is suitable for portable devices. | |
| The ultra-small package(1006size) RV2C002UN is suitable for portable devices. | |
| The ultra-small package(1006size) RV2C010UN is suitable for portable devices. | |
| This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| Transistor |
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