N-Channel 30V 35A (Ta) 35W (Tc) Surface Mount 8-HSOP
N-Channel 30V 35A (Ta) 35W (Tc) Surface Mount 8-HSOP
N-Channel 30V 35A (Ta) 35W (Tc) Surface Mount 8-HSOP
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092695-RS1E350BNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSOP
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 7900pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.7 mOhm @ 35A, 10V
Alternative Parts (Cross-Reference): AON6512; STL110NS3LLH7; STL160NS3LLH7;
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 35A 8HSOP Product overview: RS1E350BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E350BNTB can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 35A 8HSOP
MOSFET, N-CH, 30V, 35A, HSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E350BNTBTR-ND | 1092695-RS1E350BNTB | 278-RS1E350BNTB | RS1E350BNTB | RS1E350BNTB | 10AC8973 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E350BNTB | 30V 35A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 35A, Hsop; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | 8-PowerTDFN | SOT3; 8-HSOP | Tape & Reel (TR) | 8-PowerTDFN | TO-3 | |
| V(BR)DSS | 30 volts | |||||
| PD | 3000 to 35000 milliwatts | 35 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) |
