The RQ3E120BN is an N-channel power MOSFET from ROHM Semiconductor GmbH, designed for switching applications. It features a maximum drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) rating of ¬±21A at a case temperature of 25¬8C. The device has a low on-resistance (R_DS(on)) of 9.3mOc, which contributes to efficient power management. It is housed in a high power package (HSMT8) and is compliant with RoHS and halogen-free standards. The MOSFET is tested for gate charge characteristics and has a power dissipation capability of 16W. With a junction temperature rating of up to 150¬8C and a wide operating temperature range from -55¬8C to +150¬8C, this component is suitable for various applications requiring reliable performance under demanding conditions.
High power package RQ3E120BN is middle power MOSFET for switching application.
High power package RQ3E120BN is middle power MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ3E120BN | RQ3E120BN |
| Product Name | Nch 30V 21A Power MOSFET | Nch 30V 12A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 21000 milliamps | 12000 milliamps |
| QG | 14 nC | 14 nC |
| PD | 16000 milliwatts | 2000 milliwatts |
