RQ3E075AT is a P-channel MOSFET designed for switching applications, featuring a drain-source voltage rating of -30 V, a continuous drain current of -7.5 A at 25°C, and a maximum on-resistance of 23 mΩ at -10 V gate-source voltage. It is housed in an HSMT8 package and rated for a maximum power dissipation of 15 W. The device is RoHS compliant and halogen-free, with an operating junction and storage temperature range of -55°C to +150°C.
RQ3E075AT is high power small mold package(HSMT8) MOSFET for switching application.
RQ3E075AT is high power small mold package(HSMT8) MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ3E075AT | RQ3E075AT |
| Product Name | Pch -30V -18A Middle Power MOSFET | Pch -30V -18A Middle Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -18000 milliamps | -18000 milliamps |
| QG | 10.4 nC | 10.4 nC |
| PD | 15000 milliwatts | 15000 milliwatts |
