ROHM Semiconductor USA, LLC 30V 8A MOSFET Transistor RQ3E080GNTB

MOSFET N-CH 30V 8A 8HSMT Product overview: RQ3E080GNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E080GNTB can be used for catalog matching and distributor lookup.

N-Channel 30V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092616-RQ3E080GNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSMT (3.2x3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 295pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.7 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Automotive, Industrial