ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E300GNTB RS1E300GNTB

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092694-RS1E300GNTB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HSOP Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 39.8nC @ 10V Max Input Capacitance: 2500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): NTMFS4C03NT1G; CSD17576Q5BT; CSD17576Q5B; Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092694-RS1E300GNTB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HSOP Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 39.8nC @ 10V Max Input Capacitance: 2500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): NTMFS4C03NT1G; CSD17576Q5BT; CSD17576Q5B; Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E300GNTB - 1092694-RS1E300GNTB - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E300GNTB
1092694-RS1E300GNTB
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E300GNTB 1092694-RS1E300GNTB
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092694-RS1E300GNTB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HSOP Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 39.8nC @ 10V Max Input Capacitance: 2500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): NTMFS4C03NT1G; CSD17576Q5BT; CSD17576Q5B; Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092694-RS1E300GNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSOP
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 39.8nC @ 10V
Max Input Capacitance: 2500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): NTMFS4C03NT1G; CSD17576Q5BT; CSD17576Q5B;
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 30A MOSFET Transistor
278-RS1E300GNTB
30V 30A MOSFET Transistor 278-RS1E300GNTB
MOSFET N-CH 30V 30A 8-HSOP Product overview: RS1E300GNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E300GNTB can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 30A 8-HSOP Product overview: RS1E300GNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E300GNTB can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - 846-RS1E300GNTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-RS1E300GNTR-ND
Single FETs, MOSFETs 846-RS1E300GNTR-ND
MOSFET N-CH 30V 30A 8-HSOP

MOSFET N-CH 30V 30A 8-HSOP

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 4.5V Drive Nch MOSFET

MOSFET 4.5V Drive Nch MOSFET

Buy Now Datasheet
Mosfet, N-Ch, 30V, 80A, Hsop; Transistor Polarity Rohm - 10AC8972 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 80A, Hsop; Transistor Polarity Rohm
10AC8972
Mosfet, N-Ch, 30V, 80A, Hsop; Transistor Polarity Rohm 10AC8972
MOSFET, N-CH, 30V, 80A, HSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 30V, 80A, HSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RS1E300GNTB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RS1E300GNTB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RS1E300GNTB
MOSFET N-CH 30V 30A 8-HSOP

MOSFET N-CH 30V 30A 8-HSOP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1092694-RS1E300GNTB 278-RS1E300GNTB 846-RS1E300GNTR-ND RS1E300GNTB 10AC8972 RS1E300GNTB
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E300GNTB 30V 30A MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, 80A, Hsop; Transistor Polarity Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 3000 to 33000 milliwatts 3 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT3; 8-HSOP Tape & Reel (TR) 8-PowerTDFN TO-3 8-PowerTDFN
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