RQ3E120GN is an N-channel 30V power MOSFET designed for switching applications, housed in an HSMT8 package. It has a maximum continuous drain current of 12A at 25°C and a pulsed drain current of 48A. The maximum on-resistance is 8.8mΩ at VGS=10V and ID=12A, and 13.8mΩ at VGS=4.5V and ID=12A. The device supports a maximum power dissipation of 15W, with a thermal resistance junction-to-case of 8.3°C/W and junction-to-ambient of 62.5°C/W when mounted on a 40×40×0.8mm Cu board. It is RoHS compliant, halogen free, and rated for an operating junction and storage temperature range of -55°C to +150°C.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ3E120GN | RQ3E120GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 27000 milliamps | 27000 milliamps |
| PD | 15000 milliwatts | 15000 milliwatts |
