RQ6E085BN is an N-channel MOSFET for switching applications, housed in a TSMT6 surface-mount package with a maximum drain-source voltage of 30V and a continuous drain current of ±8.5A. It has a maximum on-resistance of 14.4mΩ at 10V gate-source voltage and 17.3mΩ at 4.5V gate-source voltage. The device is RoHS compliant, with a power dissipation rating of 1.25W on a ceramic board and 0.95W on FR4, and operates over a junction temperature range of -55°C to +150°C. The package dimensions and thermal characteristics are defined for specified mounting conditions.
RQ6E085BN is low on-resistance and small surface mount package MOSFET for switching application.
RQ6E085BN is low on-resistance and small surface mount package MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ6E085BN | RQ6E085BN |
| Product Name | Nch 30V 8.5A Middle Power MOSFET | Nch 30V 8.5A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 8500 milliamps | 8500 milliamps |
| QG | 16.6 nC | 16.6 nC |
| PD | 1250 milliwatts | 1250 milliwatts |
