RS3E135BN is an N-channel 30V MOSFET designed for switching applications, housed in an SOP8 surface-mount package. It has a maximum continuous drain current of 13.5A and a maximum on-resistance of 7.4mΩ at 10V gate drive. The device supports a pulsed drain current of ±54A, with an avalanche current rating of 13.5A and single-pulse avalanche energy of 26mJ. Power dissipation is rated at 2.0W on a ceramic board, with a junction temperature range of -55°C to +150°C. The part is RoHS compliant with lead-free plating.
RS3E135BN is low on-resistance and small surface mount package MOSFET for switching application.
RS3E135BN is low on-resistance and small surface mount package MOSFET for switching application.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1243875-RS3E135BN
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Power MOSFET |
| Product Number | RS3E135BN | RS3E135BN | 1243875-RS3E135BN |
| Product Name | Nch 30V 13.5A Middle Power MOSFET | Nch 30V 13.5A Middle Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS3E135BN |
| Polarity | N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | 30 volts | |
| IDSS | 13500 milliamps | 13500 milliamps | |
| QG | 16.6 nC | 16.6 nC | |
| PD | 2000 milliwatts | 2000 milliwatts |
