The RK7002BM is a 2.5V drive N-channel MOSFET from ROHM Semiconductor GmbH, designed for low-voltage applications. It features a maximum drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) rating of ±250mA. The device has a maximum on-resistance (R_DS(on)) of 2.4Ω at a gate-source voltage (V_GS) of 10V, making it suitable for efficient switching in low-side load switch and relay driver applications. This MOSFET is characterized by very fast switching capabilities and is compliant with RoHS standards, featuring Pb-free lead plating and being halogen-free. It also includes ESD protection up to 2kV (HBM), enhancing its reliability in sensitive electronic environments. The RK7002BM is packaged in a compact SOT-23 form factor, with a power dissipation rating of 350mW, making it suitable for space-constrained designs. Engineers looking for a reliable, low-voltage MOSFET for switching applications may find the RK7002BM to be a suitable choice.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RK7002BM | RK7002BM |
| Product Name | 2.5V Drive Nch MOSFET | 2.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 60 volts | 60 volts |
| IDSS | 250 milliamps | 250 milliamps |
| PD | 200 milliwatts | 200 milliwatts |
