MOSFET N-CH 30V 12A 8HSMT Product overview: RQ3E120GNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E120GNTB can be used for catalog matching and distributor lookup.
N-Channel 30V 12A (Ta) 2W (Ta), 16W (Tc) Surface Mount 8-HSMT (3.2x3)
N-Channel 30V 12A (Ta) 2W (Ta), 16W (Tc) Surface Mount 8-HSMT (3.2x3)
N-Channel 30V 12A (Ta) 2W (Ta), 16W (Tc) Surface Mount 8-HSMT (3.2x3)
Manufacturer: Rohm Semiconductor
Win Source Part Number: 892244-RQ3E120GNTB
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 30 V 12A (Ta) 2W (Ta), 16W (Tc) Surface Mount 8-HSMT (3.2x3)
Package: 8-PowerVDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: RQ3E120
Categories: Discrete Semiconductor Products
Case / Package: 8-HSMT (3.2x3)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: RQ3E120GNTBTR, RQ3E120GNTBCT, RQ3E120GNTBDKR
MOSFET N-CH 30V 12A 8HSMT
MOSFET N-CH 30V 12A 8-HSMT
MOSFET N-CH 30V 12A 8HSMT
MOSFET, N-CH, 30V, 27A, HSMT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RQ3E120GNTB | RQ3E120GNTBTR-ND | 892244-RQ3E120GNTB | RQ3E120GNTB | 687-RQ3E120GNTB | RQ3E120GNTB | 10AC8919 |
| Product Name | 30V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E120GNTB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 12A 8-HSMT | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 27A, Hsmt-8; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| Transconductance | 0.0100 kS | ||||||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
