ROHM Semiconductor USA, LLC 30V 10A 31A MOSFET Transistor RQ3E100ATTB

MOSFET P-CH 30V 10A/31A 8HSMT Product overview: RQ3E100ATTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E100ATTB can be used for catalog matching and distributor lookup.

P-Channel 30V 10A (Ta), 31A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

P-Channel 30V 10A (Ta), 31A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

P-Channel 30V 10A (Ta), 31A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Manufacturer: Rohm Semiconductor
Win Source Part Number: 805367-RQ3E100ATTB
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 11.4mOhm at 10A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 15V
Current - Continuous Drain (Id) at 25°C: 10A , 31A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 1mA
Maximum Vgs: ±20V

MOSFET P-CH 30V 10A/31A 8HSMT