The RHP020N06 is a silicon N-channel MOSFET for switching applications, packaged in an MPT3 case measuring 4.5 mm × 1.6 mm × 1.5 mm. It has a 60 V drain-source voltage rating and continuous drain current of 2 A, with pulsed current capability of 8 A (10 µs, 1% duty cycle). Power dissipation is 500 mW under standard conditions, rising to 2 W on a 40 × 40 × 0.7 mm ceramic board. Thermal resistance is 250 °C/W unheatsinked and 62.5 °C/W on the ceramic substrate. On-resistance is 150 mΩ at VGS=10 V, 200 mΩ at VGS=4.5 V, and 280 mΩ at VGS=4 V. Gate threshold voltage ranges from 1.0 V to 2.5 V, enabling 4 V logic drive. The device is supplied in tape and reel, 1000 pieces per unit.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
4V Drive Nch MOS FET Product overview: RHP020N06 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RHP020N06 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1242968-RHP020N06
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | RHP020N06 | RHP020N06 | 285-RHP020N06 | 1242968-RHP020N06 |
| Product Name | 4V Drive Nch MOSFET | 4V Drive Nch MOSFET | 4V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RHP020N06 |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | ||
| IDSS | 2000 milliamps | 2000 milliamps | ||
| PD | 2000 milliwatts | 2000 milliwatts |
