MOSFET P-CH 30V 5A TSMT8 Product overview: RQ1E050RPTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ1E050RPTR can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 115015-RQ1E050RPTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT8
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 1300pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
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MOSFET, P-CH, -30V, -5A, TSMT-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RQ1E050RPTR | 115015-RQ1E050RPTR | RQ1E050RPTR | RQ1E050RPTR-ND | 687-RQ1E050RPTR | RQ1E050RPTR | RQ1E050RPTR | 10AC8913 |
| Product Name | 30V 5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ1E050RPTR | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET P-CH 30V 5A TSMT8 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -5A, Tsmt-8; Transistor Polarity Rohm |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| Transconductance | 0.0031 kS | |||||||
| PD | 1.5 milliwatts | 700 milliwatts | 700 milliwatts | 700 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
