RQ7E110AJ is an N-channel 30V MOSFET designed for switching applications, housed in a TSMT8 surface-mount package. It has a maximum continuous drain current of 11A and a maximum on-resistance of 9.0mΩ at a gate-source voltage of 4.5V and drain current of 11A. The device supports a peak pulsed drain current of 44A and has a maximum power dissipation of 1.5W when mounted on a ceramic board. Its junction temperature range is -55°C to +150°C, and it is RoHS compliant with Pb-free lead plating. Thermal resistance from junction to ambient is 83.3°C/W on a ceramic board and 113°C/W on FR4.
RQ7E110AJ is low on-resistance and small surface mount package MOSFET for switching application.
RQ7E110AJ is low on-resistance and small surface mount package MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ7E110AJ | RQ7E110AJ |
| Product Name | Nch 30V 11A Middle Power MOSFET | Nch 30V 11A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 11000 milliamps | 11000 milliamps |
| QG | 22 nC | 22 nC |
| PD | 1500 milliwatts | 1500 milliwatts |
