RQ3E130BN is an N-channel 30V power MOSFET designed for switching applications, housed in an HSMT8 package. It has a maximum continuous drain current of 13A at 25°C case temperature and a pulsed drain current of ±52A. The drain-source on-resistance is up to 6.0mΩ at 10V gate-source voltage and 13A drain current. The device is rated for a maximum junction temperature of 150°C, with thermal resistance from junction to case of 7.8°C/W and junction to ambient of 62.5°C/W when mounted on a 40×40×0.8mm copper board. It is RoHS compliant and halogen-free, with 100% Rg and UIS tested. The gate threshold voltage ranges from 1.0V to 2.5V. Avalanche capability includes a single-pulse energy of 49mJ and a peak avalanche current of 17A.
RQ3E130BN is high power package MOSFET.
RQ3E130BN is high power package MOSFET.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1243699-RQ3E130BN
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Nch 30V 13A Middle Power MOSFET Product overview: RQ3E130BN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RQ3E130BN can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ3E130BN | RQ3E130BN | 1243699-RQ3E130BN | 285-RQ3E130BN |
| Product Name | Nch 30V 39A Power MOSFET | Nch 30V 13A Middle Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E130BN | 30V 13A MOSFET Transistor |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 39000 milliamps | 13000 milliamps | ||
| QG | 16 nC | 16 nC | ||
| PD | 16000 milliwatts | 2000 milliwatts |
