ROHM Semiconductor USA, LLC 4V Drive Nch MOSFET RP1E125XN

Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

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4V Drive Nch MOSFET - RP1E125XN - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
4V Drive Nch MOSFET
RP1E125XN
4V Drive Nch MOSFET RP1E125XN
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RP1E125XN
Product Name 4V Drive Nch MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 12500 milliamps
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