RQ6E055BN is an N-channel power MOSFET with a maximum drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) rating of ±5.5A. It features a low on-resistance of 25mΩ at a gate-source voltage (V_GS) of 10V, making it suitable for efficient switching applications. The device is housed in a compact TSMT6 surface mount package, which aids in space-constrained designs. It includes a built-in gate-source protection diode and is compliant with RoHS standards, featuring Pb-free lead plating. The maximum power dissipation is rated at 1.25W, with a junction temperature range of -55°C to +150°C. The MOSFET also exhibits low gate charge characteristics, with a total gate charge of 8.6nC at V_GS of 10V and I_D of 5.5A. This product is suitable for applications requiring reliable switching performance in a small footprint.
RQ6E055BN is small surface mount package MOSFET for switching.
RQ6E055BN is small surface mount package MOSFET for switching.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1243709-RQ6E055BN
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Small Surface Mount Package Product overview: RQ6E055BN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RQ6E055BN can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ6E055BN | RQ6E055BN | 1243709-RQ6E055BN | 285-RQ6E055BN |
| Product Name | Nch 30V 5.5A Power MOSFET | Nch 30V 5.5A Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ6E055BN | SMD MOSFET Transistor |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 5500 milliamps | 5500 milliamps | ||
| QG | 4.4 nC | 4.4 nC | ||
| PD | 1250 milliwatts | 1250 milliwatts |
