ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RP1E090RPTR RP1E090RPTR

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092583-RP1E090RPTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: MPT6
Dimension: 6-SMD, Flat Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 30nC @ 5V
Max Input Capacitance: 3000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.9 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

P-Channel 30V 9A (Ta) 2W (Ta) Surface Mount MPT6

MOSFET P-CH 30V 9A MPT6 Product overview: RP1E090RPTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RP1E090RPTR can be used for catalog matching and distributor lookup.