ROHM Semiconductor USA, LLC Single FETs, MOSFETs RQ3E080BNTB

Description
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
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Description
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RQ3E080BNTBCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RQ3E080BNTBCT-ND
Single FETs, MOSFETs RQ3E080BNTBCT-ND
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

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Single FETs, MOSFETs - RQ3E080BNTBDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RQ3E080BNTBDKR-ND
Single FETs, MOSFETs RQ3E080BNTBDKR-ND
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Buy Now Datasheet
Single FETs, MOSFETs - RQ3E080BNTBTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RQ3E080BNTBTR-ND
Single FETs, MOSFETs RQ3E080BNTBTR-ND
N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Buy Now Datasheet
FETs - Single - RQ3E080BNTB - 756158-RQ3E080BNTB - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - RQ3E080BNTB
756158-RQ3E080BNTB
FETs - Single - RQ3E080BNTB 756158-RQ3E080BNTB
Manufacturer: Rohm Semiconductor Win Source Part Number: 756158-RQ3E080BNTB Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: 150°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 2W Popularity: Low Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 8A Rds On (Maximum) at Id, Vgs: 15.2mOhm at 8A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 14.5nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 660pF at 15V

Manufacturer: Rohm Semiconductor
Win Source Part Number: 756158-RQ3E080BNTB
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2W
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 8A
Rds On (Maximum) at Id, Vgs: 15.2mOhm at 8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 14.5nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 660pF at 15V

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Single FETs, MOSFETs - RQ3E080BNTB - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
RQ3E080BNTB
Single FETs, MOSFETs RQ3E080BNTB
MOSFET N-CH 30V 8A 8HSMT

MOSFET N-CH 30V 8A 8HSMT

Supplier's Site Datasheet
Singapore
30V 8A MOSFET Transistor
278-RQ3E080BNTB
30V 8A MOSFET Transistor 278-RQ3E080BNTB
MOSFET N-CH 30V 8A 8HSMT Product overview: RQ3E080BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E080BNTB can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 8A 8HSMT Product overview: RQ3E080BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E080BNTB can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 30V 8A HSMT8 - 687-RQ3E080BNTB - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 8A HSMT8
687-RQ3E080BNTB
MOSFET N-CH 30V 8A HSMT8 687-RQ3E080BNTB
MOSFET N-CH 30V 8A HSMT8

MOSFET N-CH 30V 8A HSMT8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 4.5V Drive Nch MOSFET

MOSFET 4.5V Drive Nch MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RQ3E080BNTB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RQ3E080BNTB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RQ3E080BNTB
MOSFET N-CH 30V 8A 8HSMT

MOSFET N-CH 30V 8A 8HSMT

Supplier's Site
Mosfet, N Ch, 30V, 15A, Tsmt Rohs Compliant Rohm - 69AH2018 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 15A, Tsmt Rohs Compliant Rohm
69AH2018
Mosfet, N Ch, 30V, 15A, Tsmt Rohs Compliant Rohm 69AH2018
MOSFET, N CH, 30V, 15A, TSMT ROHS COMPLIANT: YES

MOSFET, N CH, 30V, 15A, TSMT ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RQ3E080BNTBCT-ND 756158-RQ3E080BNTB RQ3E080BNTB 278-RQ3E080BNTB 687-RQ3E080BNTB RQ3E080BNTB RQ3E080BNTB 69AH2018
Product Name Single FETs, MOSFETs FETs - Single - RQ3E080BNTB Single FETs, MOSFETs 30V 8A MOSFET Transistor MOSFET N-CH 30V 8A HSMT8 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 30V, 15A, Tsmt Rohs Compliant Rohm
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type 8-PowerVDFN SOT3 8-PowerVDFN Tape & Reel (TR) 8-PowerVDFN TO-3
V(BR)DSS 30 volts 30 volts 30 volts
PD 2000 milliwatts 2000 milliwatts 14 milliwatts 2000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F) 150 C (302 F)
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