ROHM Semiconductor USA, LLC FETs - Single - RQ3E080BNTB RQ3E080BNTB

Manufacturer: Rohm Semiconductor
Win Source Part Number: 756158-RQ3E080BNTB
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2W
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 8A
Rds On (Maximum) at Id, Vgs: 15.2mOhm at 8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 14.5nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 660pF at 15V

MOSFET N-CH 30V 8A 8HSMT

MOSFET N-CH 30V 8A 8HSMT Product overview: RQ3E080BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E080BNTB can be used for catalog matching and distributor lookup.

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