RS1E240GN is an N-channel 30V power MOSFET designed for switching applications, housed in an HSOP8 package with a power dissipation of 27W. It features a maximum on-resistance of 3.3mΩ at 10V gate voltage and can handle continuous drain currents up to 24A at 25°C, with pulsed current capability of ±96A. The device is RoHS compliant, halogen-free, and rated for junction temperatures from -55°C to +150°C. It is 100% Rg and UIS tested, with thermal resistance from junction to case of 4.6°C/W and junction to ambient of 41.7°C/W when mounted on a 40×40×0.8mm copper board. Supplied in tape and reel packaging with a reel size of 330mm and a unit quantity of 2500 pieces.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E240GN | RS1E240GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 72000 milliamps | 72000 milliamps |
| PD | 27000 milliwatts | 27000 milliwatts |
